Magnetic recording element

ABSTRACT

A magnetic recording element is disclosed for which current density required for writing is low and structure of the element is simple. It comprises a ferromagnetic fine wire formed on a Si substrate, current electrodes that contact ends of the ferromagnetic fine wire, and voltage electrodes joined to the ferromagnetic fine wire and current electrodes to measure voltage across part of the ferromagnetic fine wire in cooperation with the current electrodes. A magnetic domain wall is induced in the ferromagnetic fine wire when the element is manufactured. A depression is formed in the surface on top of the ferromagnetic fine wire between the voltage electrodes, and between one of the current electrodes and one of the voltage electrodes. Voltage is measured between the two voltage electrodes when reading current is applied, to determine whether the magnetic domain wall is present between the two voltage electrodes, whereby recorded data can be identified.

CROSS REFERENCE TO RELATED APPLICATIONS

This is a divisional of and claims priority from U.S. patent applicationSer. No. 11/682,967 filed Mar. 7, 2007 now U.S. Pat. No. 7,626,856 whichin turn claims priority from JP application SN. 2006-077387, filed onMar. 20, 2006, the contents of each of which are incorporated herein byreference in their entirety.

BACKGROUND OF THE INVENTION

A. Field of the Invention

The present invention relates to a magnetic domain wall motion-detectingterminal-possessing magnetic recording medium, and more particularlyrelates to a magnetic domain wall motion-detecting terminal-possessingmagnetic recording element which carries out data storage by changingthe state of magnetization of a ferromagnetic body.

B. Description of the Related Art

Currently, volatile memories and nonvolatile memories are used inpersonal computers and peripherals. With a volatile memory such as aDRAM, held data is lost when the power supply is turned off, but therewriting and reading speeds and the degree of integration areexcellent. On the other hand, with a nonvolatile memory such as a flashmemory, the writing and reading speeds are poorer, but there is theadvantage that data continues to be held even when the power supply isturned off.

An ideal form of memory would be one that has the advantages of both avolatile memory and a nonvolatile memory, i.e., one that has fastwriting and reading speeds, and yet that continues to hold data evenwhen the power supply is turned off. One of the most promising of suchdevised next generation memories is a magnetic random access memory(MRAM).

A magnetic random access memory (MRAM) according to the prior art shownin FIGS. 5A and 5B is a memory that uses a magnetic tunnel junction(MTJ) element 11 having as a basic structure a multi-layer structure offerromagnetic free layer 12, insulator layer 13, and ferromagnetic fixedlayer 14. With such an MTJ element 11, binary data is produced using theproperty that the resistance of a tunnel current flowing in thedirection through the layers differs according to whether themagnetization directions of ferromagnetic free layer 12 andferromagnetic fixed layer 14 are parallel or anti-parallel. Themagnetization direction of a ferromagnetic body is maintained even whenthe current is turned off, and hence such an MRAM is a nonvolatilememory. In the drawings, the arrows within the layer indicatemagnetization directions of the layers. The layer with bi-directionalarrow indicates the layer in which magnetic inversion takes place.

As the structure of an MRAM, a structure in which MTJ elements 11 aredisposed at points of intersection between bit lines 15 and write wordlines 16 wired in a perpendicular matrix shape as shown in FIG. 5B isgenerally adopted. Each MTJ element 11, together with a MOS transistorthat acts as a switching element for cell selection, constitutes a 1 bitcell.

Writing is carried out by passing a current through both bit line 15 andwrite word line 16. Upon the current being passed through both bit line15 and write word line 16, a magnetic field induced from each of thesewires is applied to the point of intersection, whereby the magnetizationof ferromagnetic free layer 12 can be reversed. With bit line 15 orwrite word line 16 alone, the switching magnetic field required forreversing the magnetization of ferromagnetic free layer 12 is notobtained, and hence writing can be carried out to only the bit cell atthe point of intersection between bit line 15 and write word line 16.Writing can thus be carried out to any chosen bit cell.

Reading is carried out by selecting a desired bit line 15 and read wordline 17, and measuring the resistance of a current flowing between thebit line 15 and a reading electrode 18 connected to the read word line17. The resistance of an MTJ element 11 can take either of two valuesdepending on the combination of the magnetization directions offerromagnetic free layer 12 and ferromagnetic fixed layer 14, and henceby setting an intermediate value therebetween as a reference voltage,either of two data values “1” and “0” can be obtained depending on themeasured resistance.

Furthermore, in recent years, there has been developed a spin injectionmagnetization reversal MTJ element in which the magnetization offerromagnetic free layer 12 is reversed by passing a spin polarizedcurrent instead of applying a magnetic field due to a current flowingthrough each of bit line 15 and write word line 16, and an MRAM usingsuch spin injection magnetization reversal MTJ elements.

FIG. 6 is a view showing the structure of an MRAM using a spin injectionmagnetization reversal technique proposed in Japanese Patent ApplicationLaid-open No. 11-120758. Writing is carried out as follows. Consider acurrent being passed such that electrons are injected from ferromagneticfixed layer 14 into ferromagnetic free layer 12. The spin of an electronpassing through ferromagnetic fixed layer 14 undergoes exchangeinteraction with the magnetization of ferromagnetic fixed layer 14 andthus receives spin torque from the magnetization, and hence is polarizedin the magnetization direction of ferromagnetic fixed layer 14. When thespin polarized electron enters ferromagnetic free layer 12, the electronnow gives spin torque to the magnetization of ferromagnetic free layer12. In this way, the magnetization of ferromagnetic free layer 12 isaligned so that it is parallel with the magnetization of ferromagneticfixed layer 14.

On the other hand, when a current is passed such that electrons areinjected from ferromagnetic free layer 12 into ferromagnetic fixed layer14, electrons each having a spin anti-parallel to the magnetization offerromagnetic fixed layer 14 are reflected at the interface betweenferromagnetic fixed layer 14 and insulator layer 13, and the reflectedelectrons give a spin torque to the magnetization of ferromagnetic freelayer 12. As a result, the magnetization of ferromagnetic free layer 12becomes anti-parallel to the magnetization of ferromagnetic fixed layer14.

Through the above effects, by selecting the direction of the currentapplied to the multi-layer film, the magnetizations of ferromagneticfixed layer 14 and ferromagnetic free layer 12 can be made to beparallel or anti-parallel to one another. Actually carrying out writingby reversing the magnetization of ferromagnetic free layer 12 using acurrent requires a current greater than a certain current, i.e., acritical current. When reading, a current less than the critical currentis passed, and the data is read by measuring the resistance as with aconventional MRAM.

With an MRAM using the spin injection magnetization reversal technique,compared with a conventional MRAM, the write word lines 16 for producinga writing magnetic field are not required, and hence there is anadvantage that the structure of the element can be simplified. However,with the spin injection magnetization reversal technique, the criticalcurrent density required for magnetization reversal is approximately5×10⁷ A/cm², and hence there is a problem that the current density ishigh.

In Japanese Patent Application Laid-open No. 2005-191032, there is thusproposed an MRAM of a type in which a magnetic domain wall inferromagnetic free layer 12 is moved using a current-driven magneticdomain wall motion technique of moving the magnetic domain wall in theferromagnetic body by applying a current, instead of the spin injectionmagnetization reversal technique. It is thought that current-drivenmagnetic domain wall motion is produced through two effects, namelymagnetization alignment due to spin torque given to the magnetization ofthe ferromagnetic body by the electron spin of the applied current, andmomentum transferring from the electrons to the magnetic domain wallaccompanying electron scattering by the magnetic domain wall.

Following is a description of the MRAM using the current-driven magneticdomain wall motion technique proposed in Japanese Patent ApplicationLaid-open No. 2005-191032 with reference to FIG. 7. Insulator layer 13and ferromagnetic fixed layer 14 are laminated on ferromagnetic freelayer 12, and a read word line (not shown) is connected to ferromagneticfixed layer 14 via reading electrode 18. On the other hand, writingelectrodes 19 a and 19 b are formed at respective ends of ferromagneticfree layer 12.

As shown in FIG. 7A, when magnetic domain wall 20 is to the left in thedrawing of a multi-layer portion including ferromagnetic fixed layer 14,and the magnetizations of ferromagnetic free layer 12 and ferromagneticfixed layer 14 are aligned parallel to one another, if a current ispassed to writing electrode 19 b from reading electrode 18, then theelement exhibits low resistance.

To carry out data recording, current 21 is passed from writing electrode19 b to writing electrode 19 a. Through the application of the current,magnetic domain wall 20 moves to the right in the drawing, and hence themagnetization of ferromagnetic free layer 12 at the multi-layer portionand the magnetization of ferromagnetic fixed layer 14 becomeanti-parallel to one another. If a current is passed from readingelectrode 18 to writing electrode 19 b in this state, then the elementnow exhibits high resistance.

As described above, using the current-driven magnetic domain wall motiontechnique, the magnetization of ferromagnetic free layer 12 of the MTJelement can be reversed and yet, unlike with an MRAM using the spininjection magnetization reversal technique, current is applied to onlythe ferromagnetic free layer, and hence there is the advantage that thepower consumption can be reduced.

However, with MRAMs of the prior art, it has been difficult to achieveboth making the elements minute so as to increase the recording densityand simplifying the structure to realize this, and reducing the writingcurrent. With the MRAM using the spin injection magnetization reversaltechnique, simplification of the structure is realized by omitting thewriting elements. However, the current density required for the spininjection magnetization reversal has not yet been reduced to an extentthat practical implementation is possible. On the other hand, with theMRAM using the current-driven magnetic domain wall motion technique,electrodes for applying a writing current for moving the magnetic domainwall in the ferromagnetic free layer are formed, whereby the currentrequired for writing is reduced. However, it is still necessary to forma multi-layer portion including ferromagnetic fixed layer 14, and hencethe structure is complex.

The present invention is directed to overcoming or at least reducing theeffects of one or more of the problems set forth above.

SUMMARY OF THE INVENTION

The present invention has been devised in view of the above problems; itis an object of the present invention to provide a simple magneticrecording element of the magnetic domain wall motion-detectingterminal-possessing type for which the writing current can be kept low,and the element has a small structure.

It is an object of the invention to provide a magnetic recording elementof the magnetic domain wall motion detecting terminal-possessingmagnetic domain wall motion type, for which the current density requiredfor writing is low, and the structure of the element is simple. Theelement comprises ferromagnetic fine wire 1 formed on an Si substrate,current electrodes 2 a and 2 b that contact respective ends offerromagnetic fine wire 1, and voltage electrodes 4 a and 4 b that arejoined to ferromagnetic fine wire 1 and current electrodes 2 a and 2 bso as to be able to measure the voltage across a part of ferromagneticfine wire 1 in cooperation with current electrodes 2 a and 2 b. Magneticdomain wall 3 is induced in ferromagnetic fine wire 1 when the elementis manufactured. Depression 5 is formed in the surface on top offerromagnetic fine wire 1 between voltage electrodes 4 a and 4 b, andbetween current electrode 2 a and voltage electrode 4 a, using meanssuch as ion beam etching. The voltage between voltage electrode 4 a andvoltage electrode 4 b when reading current 8 is applied is measured, soas to investigate whether or not magnetic domain wall 3 is presentbetween voltage electrode 4 a and voltage electrode 4 b, wherebyrecorded data can be identified.

Thus, the present invention provides a magnetic recording element of themagnetic domain wall motion-detecting terminal-possessing magneticdomain wall motion type, comprising a ferromagnetic body, a firstelectrode pair joined to the ferromagnetic body, and a second electrodepair joined to a surface of the ferromagnetic body to which the firstelectrode pair is not joined and/or to part of the first electrode pair,wherein the second electrode pair comprises a first electrode and asecond electrode. The first electrode and the second electrode aredisposed such that a potential difference arises between the secondelectrode pair when a current is passed between the first electrodepair, at least one of the first electrode and the second electrode isjoined to the ferromagnetic body such that a gap is created between theone of the first electrode pair in which a magnetic domain wall can beheld, and the ferromagnetic body has at least one magnetic domain wallinduced therein.

In one embodiment, the first electrode and the second electrode aredisposed on the same surface.

In another embodiment, the first electrode and the second electrode aredisposed on surfaces facing one another.

In a further embodiment, the first electrode and the second electrodeare disposed on surfaces adjacent to one another.

Also provided according to the invention is a magnetic recording elementaccording to any of these embodiments, further comprising means forpassing a current having a first current density between the firstelectrode pair, so as to move the magnetic domain wall through theferromagnetic body.

Yet another embodiment further comprises means for passing a currenthaving a second current density between the first electrode pair, andmeasuring a voltage between the second electrode pair, so as to detectthe number of the magnetic domain walls present within the ferromagneticbody between positions of joints with the second electrode pair.

In another embodiment, the number of the magnetic domain walls presentwithin the ferromagnetic body between positions of joints with thesecond electrode pair is correlated to recorded data.

A further embodiment additionally comprises means for applying a firstmagnetic field greater than a coercivity of the ferromagnetic body tothe ferromagnetic body so as to subject the ferromagnetic body tosaturation magnetization, means for heating one of the first electrodepair joined to the ferromagnetic body so as to heat one end only of theferromagnetic body, and means for applying to the ferromagnetic body asecond magnetic field that is anti-parallel to the first magnetic fieldand has a magnitude less than the coercivity and sufficient to enableonly the heated portion of the ferromagnetic body to be subjected tomagnetization reversal, thus subjecting only the heated portion of theferromagnetic body to magnetization reversal so as to induce themagnetic domain wall.

According to the present invention, an MRAM can be realized for whichthe current density required for writing is low, and which is small andhas a simple element structure.

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing advantages and features of the invention will becomeapparent upon reference to the following detailed description and theaccompanying drawings, of which:

FIGS. 1A and B are sectional views showing the structure of a magneticrecording element before a magnetic domain wall is induced according toEmbodiment 1 of the present invention, and FIG. 1C is a sectional viewshowing the structure of the magnetic recording element after themagnetic domain wall has been induced according to Embodiment 1 of thepresent invention;

FIG. 2A is a view showing the magnetic recording element according toEmbodiment 1 of the present invention in a state in which a magneticdomain wall is not present between voltage electrodes, FIG. 2B is a viewshowing data writing for the magnetic recording element according toEmbodiment 1 of the present invention by moving a magnetic domain wallto a position between the voltage electrodes, and FIG. 2C is a viewshowing data writing for the magnetic recording element according toEmbodiment 1 of the present invention by moving the magnetic domain wallto a position that is not between the voltage electrodes;

FIG. 3A is a view showing data reading for the magnetic recordingelement according to Embodiment 1 of the present invention in a state inwhich the magnetic domain wall is not present between the voltageelectrodes, and FIG. 3B is a view showing data reading for the magneticrecording element according to Embodiment 1 of the present invention ina state in which the magnetic domain wall is present between the voltageelectrodes;

FIG. 4A is a view showing a magnetic recording element according toEmbodiment 2 of the present invention in a state in which there is nomagnetic domain wall between voltage electrodes, FIG. 4B is a viewshowing the magnetic recording element according to Embodiment 2 of thepresent invention in a state in which there is one magnetic domain wallbetween the voltage electrodes, and FIG. 4C is a view showing themagnetic recording element according to Embodiment 2 of the presentinvention in a state in which there are two magnetic domain wallsbetween the voltage electrodes;

FIG. 5A is a sectional view showing the structure of an MTJ elementaccording to prior art, and FIG. 5B is a view showing the structure ofan MRAM in which are integrated such MTJ elements according to the priorart;

FIG. 6 is a view showing the structure of an MTJ element using a spininjection magnetization reversal technique according to prior art;

FIG. 7A is a view showing the structure of an MTJ element using acurrent-driven magnetic domain wall motion technique according to priorart in a state in which a magnetic domain wall is on a current electrode19 a side, and FIG. 7B is a view showing the structure of the MTJelement using the current-driven magnetic domain wall motion techniqueaccording to the prior art in a state in which the magnetic domain wallis on a current electrode 19 b side; and

FIG. 8 is a sectional view showing the structure of a magnetic domainwall motion-detecting terminal-possessing magnetic domain wall motiontype magnetic recording element according to Embodiment 3 of the presentinvention.

DETAILED DESCRIPTION OF SPECIFIC EMBODIMENTS Embodiment 1

Following is a detailed description of embodiments of the presentinvention with reference to the drawings. Note that in the drawingsdescribed below, elements having the same function are designated by thesame reference numeral, and repeated description is omitted.

FIGS. 1A to 1C are sectional views showing the structure of a magneticrecording element of the magnetic domain wall motion-detectingterminal-possessing magnetic domain wall motion type according toEmbodiment 1 of the present invention. The element comprisesferromagnetic fine wire 1 formed on Si substrate 10, current electrodes2 a and 2 b that are formed in contact with respective ends offerromagnetic fine wire 1, and voltage electrodes 4 a and 4 b that areembedded in substrate 10 and joined to ferromagnetic fine wire 1.

In the present embodiment, voltage electrode 4 a is positionedapproximately in the center of ferromagnetic fine wire 1, and voltageelectrode 4 b is disposed close to current electrode 2 b, but there isno limitation to this arrangement. As described below, voltageelectrodes 4 a and 4 b are electrodes used when reading data, it beingdetermined whether data is “0” or “1” from the voltage between voltageelectrode 4 a and the voltage electrode 4 b. This data changes accordingto whether or not there is a magnetic domain wall between voltageelectrode 4 a and voltage electrode 4 b, and hence there must be aregion in which a magnetic domain wall will stop between voltageelectrode 4 a and voltage electrode 4 b in the ferromagnetic fine wire.Furthermore, because the above data corresponds to the voltage betweenvoltage electrode 4 a and voltage electrode 4 b, voltage electrode 4 aand voltage electrode 4 b must be separated from one another by apredetermined gap. Moreover, because there must be a case when there isand a case when there is not a magnetic domain wall between voltageelectrode 4 a and voltage electrode 4 b in the ferromagnetic fine wire,there must be formed in the ferromagnetic fine wire a region that isbetween the voltage electrodes 4 a and 4 b (referred to as the “firstregion” in the present specification) and a region that is not betweenthe voltage electrodes 4 a and 4 b (referred to as the “second region”in the present specification). That is, so long as voltage electrodes 4a and 4 b are disposed such that a magnetic domain wall can be held ineach of the first region or the second region, voltage electrodes 4 aand 4 b may be disposed anywhere.

Note that because the second region is a region that is not betweenvoltage electrode 4 a and voltage electrode 4 b in the ferromagneticfine wire, in FIGS. 1A to 1C, the second region is the region betweencurrent electrode 2 a and voltage electrode 4 a. Alternatively, thesecond region may be the region between current electrode 2 b andvoltage electrode 4 b.

Voltage electrodes 4 a and 4 b are disposed such that the voltage of acurrent flowing between current electrode 2 a and current electrode 2 bcan be measured. In the present embodiment, voltage electrodes 4 a and 4b are not limited to being embedded in substrate 10, but rather mayalternatively be formed on substrate 10, or on a surface offerromagnetic fine wire 1 facing substrate 10. Furthermore, in thepresent embodiment, voltage electrodes 4 a and 4 b are both formed onthe same surface, but there is no limitation to this; voltage electrodes4 a and 4 b may alternatively be formed on different surfaces to oneanother such as surfaces of ferromagnetic fine wire 1 facing one anotheror adjacent surfaces. That is, voltage electrodes 4 a and 4 b are joinedto ferromagnetic fine wire 1 and current electrodes 2 a and 2 b suchthat, as described below, when a current is passed between currentelectrodes 2 a and 2 b, the voltage across a part of ferromagnetic finewire 1 can be measured in cooperation with current electrodes 2 a and 2b. That is, voltage electrodes 4 a and 4 b are such that, when a currentis passed between current electrodes 2 a and 2 b, a potential differencearises between voltage electrodes 4 a and 4 b, so that the voltage canbe measured.

In Embodiment 1, Ni₈₀Fe₂₀ Permalloy is used for ferromagnetic fine wire1, and ferromagnetic fine wire 1 has a length of 200 nm, a width of 10nm, and a height of 10 nm. Here, the length is the distance in thedirection between current electrodes 2 a and 2 b, the width is thedistance in the direction in the plane of the substrate orthogonal tothe length direction, and the height is the distance in the directionperpendicular to the substrate. Moreover, in Embodiment 1, an axis ofeasy magnetization of ferromagnetic fine wire 1 is disposed such thatthe magnetization is oriented parallel to the substrate plane.

In the present embodiment, when the element is manufactured, onemagnetic domain wall 3 is induced in ferromagnetic fine wire 1. InEmbodiment 1, by applying magnetic field 6 sufficiently greater than thecoercivity of ferromagnetic fine wire 1 over the whole of ferromagneticfine wire 1, the whole of ferromagnetic fine wire 1 is subjected tosaturation magnetization (FIG. 1A). As the method of subjecting thewhole of ferromagnetic fine wire 1 to saturation magnetization, forexample, there is a method of magnetizing by applying a magnetic fieldproduced between the S pole and the N pole of a strong permanent magnetof NdCo type (NdCoB), SmCo type (SmCo) or the like. Moreover, in analternative, there is a method in which the magnetic field is applied byplacing the element in a strong magnetic field produced by asuperconductive coil. The magnitude of the magnetic field produced byeither of these methods is preferably 8000 to 15000 oersted.

Next, current electrode 2 a is heated by irradiating with a laser or thelike, so that the temperature of the portion of ferromagnetic fine wire1 contacting current electrode 2 a rises (FIG. 1B). Alternatively, acurrent may be passed into current electrode 2 a, so that currentelectrode 2 a itself generates heat, thus raising the temperature of aportion of ferromagnetic fine wire 1.

Then, magnetic field 6 less than the coercivity of the ferromagneticfine wire 1 is applied in a direction opposite to that of the initiallyapplied magnetic field (FIG. 1C). The coercivity is reduced in theportion of ferromagnetic fine wire 1 of raised temperature, and hencemagnetization reversal is brought about at a magnetic field lower thanthe original coercivity. The temperature distribution of ferromagneticfine wire 1 is such that the temperature decreases monotonically withincreasing separation from heated current electrode 2 a, and hence onlyone magnetic domain is newly produced accompanying the magnetizationreversal, and thus only one magnetic domain wall 3 is produced.Moreover, because ferromagnetic fine wire 1 is a thin film thatstretches out parallel to the substrate plane, the magnetic domain wallproduced at this time is perpendicular to the substrate plane. As themethod of applying magnetic field 6 less than the coercivity offerromagnetic fine wire 1, for example, there is a method of magnetizingby applying a magnetic field produced between the S pole and the N poleof a strong permanent magnet of NdCo type (NdCoB), SmCo type (SmCo) orthe like. Here, the strength of the magnetic field produced is adjustedby making the gap between the S pole and the N pole larger than the gapbetween the S pole and the N pole of the permanent magnet used whensubjecting the whole of ferromagnetic fine wire 1 to saturationmagnetization. Moreover, other than this, the magnetization can also becarried out by applying a strong magnetic field produced by asuperconductive coil. Here, the strength of the magnetic field producedis adjusted by reducing the number of turns of the superconductive coilor the current. The magnitude of the magnetic field produced usingeither of these methods is less than the coercivity of ferromagneticfine wire 1, for example, and may be approximately a few tens to a fewhundreds of oersted.

In this way, the application of the magnetic field in FIG. 1A is carriedout to subject the whole of ferromagnetic fine wire 1 to saturationmagnetization in a certain direction, and then the application of themagnetic field in FIG. 1C is carried out to induce a magnetic domainwall in ferromagnetic fine wire 1 that has been subjected to thesaturation magnetization in that direction. Accordingly, in the presentembodiment, the directions of the magnetic fields are not limited tothose in FIGS. 1A and 1C, but rather may be in any direction so long asthe direction of the magnetic field for subjecting the whole offerromagnetic fine wire 1 to saturation magnetization and the directionof the magnetic field for inducing the magnetic domain wall are oppositeto one another.

As another method of introducing the magnetic domain wall, there is amethod in which part of the magnetization in ferromagnetic fine wire 1is fixed, and then a magnetic field is applied over the whole offerromagnetic fine wire 1, so as to reverse the non-fixed magnetizationand thus induce a magnetic domain wall. As the method of fixing themagnetization, there is a method in which an anti-ferromagnetic film ofIrMn or the like is formed in a magnetic field close to currentelectrode 2 a on top of ferromagnetic fine wire 1 so as to bring aboutexchange coupling with the magnetization of ferromagnetic fine wire 1.Alternatively, there is a method in which Ru and a ferromagnetic fixedlayer are formed close to current electrode 2 a on top of ferromagneticfine wire 1, and the magnetization of the ferromagnetic fixed layer andthe magnetization of ferromagnetic fine wire 1 are made to undergoanti-ferromagnetic coupling, thus fixing the magnetization offerromagnetic fine wire 1 under the anti-ferromagnetic film. InEmbodiment 1, such a method has not been adopted since the structure ofthe element would become complex, but there is an advantage that heatingis not required with such a method. Here, on top of ferromagnetic finewire 1 in the present specification means the side of the surface offerromagnetic fine wire 1 opposite the surface contacting the substrate.

Depression (defect) 5 is formed in the surface on top of ferromagneticfine wire 1 between voltage electrodes 4 a and 4 b using means such asion beam etching. Depression 5 has an effect of pinning magnetic domainwall 3 moving through ferromagnetic fine wire 1. That is, magneticdomain wall 3 can be moved accurately to the position of depression 5.

Next, FIGS. 2A to 2C show views explaining a data writing method for amagnetic recording element of the magnetic domain wall motion-detectingterminal-possessing magnetic domain wall motion type according to anembodiment of the present invention. The procedure of data writing willbe described with reference to FIGS. 2A to 2C. At a stage in which themagnetic domain wall has been initially produced (FIG. 1C), magneticdomain wall 3 is positioned close to current electrode 2 a, i.e., to theleft of voltage electrode 4 a in the drawings (in the second region).This state in which magnetic domain wall 3 is in the second region willbe taken as data “0” (FIG. 2A).

Upon a current (writing current 7) being passed from current electrode 2b to current electrode 2 a, magnetic domain wall 3 moves from close tocurrent electrode 2 a (the left in the drawings) toward currentelectrode 2 b (the right in the drawings). The current is applied for apredetermined time such that magnetic domain wall 3 enters into theregion between voltage electrode 4 a and voltage electrode 4 b (thefirst region) and stops at the position of depression 5. This state inwhich magnetic domain wall 3 is in the first region will be taken asdata “1” (FIG. 2B). Here, the predetermined time for which the currentis applied can be calculated from the speed at which magnetic domainwall 3 moves through ferromagnetic fine wire 1, which is measured inadvance, and the distance from close to current electrode 2 a to thefirst region.

To return from the data “1” state to the data “0” state, writing current7 is passed from current electrode 2 a to current electrode 2 b, so asto move magnetic domain wall 3 from the position of depression 5 toclose to current electrode 2 a which is to the left of voltage electrode4 a, i.e., into the second region (FIG. 2C). Note that anotherdepression may be formed between current electrode 2 a and voltageelectrode 4 a so that magnetic domain wall 3 can also be pinned easilyin the second region.

According to Yamanouchi, Michibiko, et al., “Current-Induced MagneticDomain Wall Motion in a Ferromagnetic Coercivity Patterned Structure”,Physical Society of Japan, March 2005, Proceedings of the 60^(th) AnnualConference, 27a YP-5 (in Japanese), the optimum current density formagnetic domain wall motion in an Ni₈₀Fe₂₀ permalloy fine wire isapproximately 8×10⁴ A/cm², and this corresponds to passing a current ofapproximately 10 pA in Embodiment 1. Moreover, according to A.Yamaguchi, “Real-Space Observation of Current-Driven Domain Wall Motionin Submicron Magnetic Wires,” Phys. Rev. Lett., 2004 vol. 92, 077205,the speed of movement of the magnetic domain wall is approximately 3m/s. Hence, taking the distance through which the magnetic domain wallis moved when carrying out recording in Embodiment 1 to be approximately150 nm, if the time for which the current is applied is made to beapproximately 50 ns, then the magnetic domain wall can be moved betweenclose to current electrode 2 a and depression 5 as described above. Thatis, under the conditions in A. Yamaguchi, “Real-Space Observation ofCurrent-Driven Domain Wall Motion in Submicron Magnetic Wires,” Phys.Rev. Lett., 2004 vol. 92, 077205, the switching time for the element is50 ns, i.e., a switching speed approximately the same as that for acurrently available flash memory can be realized. On the other hand, thespeed of current-driven magnetic domain wall motion is predicted fromtheory to be approximately 10 m/s, and hence it is thought thatultimately it will be possible to improve the switching time to a fewns.

FIGS. 3A and 3B show views for explaining a data reading method for themagnetic recording element of the magnetic domain wall motion-detectingterminal-possessing magnetic domain wall motion type according toEmbodiment 1 of the present invention. As shown in FIGS. 3A and 3B, datareading is carried out by passing a current from current electrode 2 ato current electrode 2 b, i.e., reading current 8, and measuring theelectrical resistance of ferromagnetic fine wire 1. The magnitude ofreading current 8 must be such that magnetic domain wall motion is notinduced, and in Embodiment 1 is made to be 5 nA. In ferromagnetic finewire 1, the change in the electrical resistance according to whether ornot magnetic domain wall 3 is present can be measured, and hence therecorded data can be identified from the value of the electricalresistance, i.e., the data can be read. In Embodiment 1, when readingcurrent 8 is applied, the voltage between voltage electrode 4 a andvoltage electrode 4 b is measured, in order to investigate whether ornot magnetic domain wall 3 is present between voltage electrode 4 a andvoltage electrode 4 b, whereby the recorded data can be identified.

In the present embodiment, voltage electrodes 4 a and 4 b disposed so asto form the first and second regions are able to measure the voltagechange corresponding to the number of magnetic domain walls present (inthe present embodiment, the voltage according to whether there are 0 or1 magnetic domain walls, and in Embodiment 2, the voltage according towhether there are 0, 1 or 2 magnetic domain walls). The measured voltagebetween voltage electrode 4 a and voltage electrode 4 b corresponds tothe data, and hence voltage electrodes 4 a and 4 b act as means forreading the data.

In the present embodiment, in the magnetic domain wall motion typemagnetic recording element, data writing and reading are not carried outby providing a ferromagnetic fixed layer and a ferromagnetic free layerand making the magnetizations of these layers be parallel oranti-parallel as conventionally, but rather through whether or not thereis a magnetic domain wall in a region for reading data, i.e., betweenvoltage electrodes, in a ferromagnetic layer. There is thus no need toprovide a ferromagnetic fixed layer as conventionally, and hence thestructure of the element can be made simpler and thus the element can bemade smaller.

Embodiment 2

In Embodiment 1, the number of magnetic domain walls was limited to one,but by increasing the number of magnetic domain walls introduced,multi-value recording can be realized.

FIGS. 4A to 4C show views for explaining data writing and readingmethods for a magnetic recording element of the magnetic domain wallmotion-detecting terminal-possessing magnetic domain wall motion typeaccording to Embodiment 2 of the present invention. In Embodiment 2, twomagnetic domain walls are introduced, whereby ternary recording can becarried out.

The structure of the element in Embodiment 2 is the same as inEmbodiment 1 with regard to ferromagnetic fine wire 1, currentelectrodes 2 a and 2 b, and voltage electrodes 4 a and 4 b. Thedifference is that whereas one depression 5 for pinning a magneticdomain wall was created in Embodiment 1, two such depressions 5 arecreated in Embodiment 2, and two magnetic domain walls are induced inferromagnetic fine wire 1 when manufacturing the element.

The two magnetic domain walls are induced as follows. Firstly, as in thefirst embodiment, a magnetic field sufficiently greater than thecoercivity of ferromagnetic fine wire 1 is applied to ferromagnetic finewire 1, thus subjecting the whole of ferromagnetic fine wire 1 tosaturation magnetization. Current electrode 2 a is then heated byirradiating with a laser or the like, so that the temperature of theportion of ferromagnetic fine wire 1 contacting current electrode 2 arises. In addition, a magnetic field less than the coercivity offerromagnetic fine wire 1 is applied in a direction opposite to that ofthe initially applied magnetic field, thus producing first magneticdomain wall 3 a.

After first magnetic domain wall 3 a has been produced, a current ispassed from current electrode 2 b to current electrode 2 a, thus movingmagnetic domain wall 3 a from close to current electrode 2 a (the leftin the drawings) toward current electrode 2 b (the right in thedrawings), the current being stopped once magnetic domain wall 3 a hasreached the position of depression 5 a on the left in the drawings. Inthis state, current electrode 2 a is again heated, and a magnetic fieldis applied in the opposite direction to that used when inducing magneticdomain wall 3 a, whereupon second magnetic domain wall 3 b is inducedclose to current electrode 2 a. In this way, two magnetic domain walls,i.e., magnetic domain walls 3 a and 3 b, can be induced in ferromagneticfine wire 1. Finally, a current is passed from current electrode 2 a tocurrent electrode 2 b, thus collecting together the two magnetic domainwalls close to current electrode 2 a

The procedure for recording is as follows. Take the state in which thetwo magnetic domain walls are close to current electrode 2 a, i.e., arepositioned to the left of voltage electrode 4 a in the drawings, to bedata “0”.

When writing current 7 is passed from current electrode 2 b to currentelectrode 2 a, the magnetic domain walls move from close to currentelectrode 2 a (the left in the drawings) toward current electrode 2 b(the right in the drawings). The current is applied for a predeterminedtime such that the magnetic domain wall on the right in the drawingsenters into the region between voltage electrode 4 a and voltageelectrode 4 b and stops at the position of first depression 5 a. Thisstate is taken as data “1”.

Writing current 7 is then further passed from current electrode 2 b tocurrent electrode 2 a, writing current 7 being applied for apredetermined time such that magnetic domain walls 3 a and 3 b bothenter into the region between voltage electrode 4 a and voltageelectrode 4 b, and reach the positions of depressions 5 a and 5 brespectively. This state is taken as data “2”.

The moving between data “0”, data “1”, and data “2”, i.e., the moving ofmagnetic domain walls 3 a and 3 b to predetermined positionscorresponding to the respective states, can be controlled by suitablyadministering the direction in which the current is applied and the timefor which the current is applied.

Data reading is carried out as in Embodiment 1 by passing readingcurrent 8 from current electrode 2 a to current electrode 2 b, andmeasuring the voltage between voltage electrode 4 a and voltageelectrode 4 b. The magnitude of the voltage between voltage electrode 4a and voltage electrode 4 b is proportional to the number of magneticdomain walls between voltage electrode 4 a and voltage electrode 4 b,and hence the number of magnetic domain walls between voltage electrode4 a and voltage electrode 4 b can be investigated from the magnitude ofthe voltage, whereby the recorded data can be identified.

Embodiment 3

In Embodiment 1, current electrodes 2 a and 2 b, and voltage electrodes4 a and 4 b are separated from all the other electrodes. In Embodiment1, between current electrodes 2 a and 2 b, either the region betweencurrent electrode 2 a and voltage electrode 4 a, or the region betweencurrent electrode 2 b and voltage electrode 4 b is used as a region notbetween the voltage electrodes (second region). In the presentinvention, at least one second region must be formed between currentelectrodes 2 a and 2 b. In the present embodiment, one of the currentelectrodes is used as one of the voltage electrodes. FIG. 8 is asectional view showing the structure of a magnetic recording element ofthe magnetic domain wall motion-detecting terminal-possessing magneticdomain wall motion type according to Embodiment 3 of the presentinvention. Data reading is carried out by passing reading current 8 fromelectrode 2 a to electrode 2 b, and measuring the voltage betweenelectrode 4 and electrode 2 b. Because the resistance between electrode4 and the electrode 2 b changes according to whether or not magneticdomain wall 3 is present between electrode 4 and electrode 2 b, therecorded data can be identified.

Thus, a magnetic recording element of the magnetic domain wallmotion-detecting terminal-possessing magnetic domain wall motion typehas been described according to the present invention. Manymodifications and variations may be made to the techniques andstructures described and illustrated herein without departing from thespirit and scope of the invention. Accordingly, it should be understoodthat the elements and methods described herein are illustrative only andare not limiting upon the scope of the invention.

1. A magnetic recording element, comprising: a ferromagnetic body; afirst electrode pair joined to the ferromagnetic body; and a secondelectrode pair joined to the ferromagnetic body at a position other thanthat to which the first electrode pair is joined; wherein theferromagnetic body has at least one magnetic domain wall therein,wherein there is a first gap between members of the second electrodepair and a second gap between one member of the first electrode pair andone of the members of the second electrode pair, whereby the magneticdomain wall can be held in either of the gaps, and wherein there is apotential difference between members of the second electrode pair when acurrent is passed between members of the first electrode pair.
 2. Amagnetic recording element according to claim 1, wherein the potentialdifference differs depending on whether the magnetic domain wall is heldin the first gap or the second gap.
 3. A magnetic recording elementaccording to claim 1, additionally comprising means in a first one ofthe gaps for pinning the magnetic domain wall.
 4. A magnetic recordingelement according to claim 3, additionally comprising means in a secondone of the gaps for pinning the magnetic domain wall.
 5. A magneticrecording element according to claim 1, wherein the ferromagnetic bodyhas two magnetic domain walls therein.
 6. A magnetic recording elementaccording to claim 5, wherein there are three values for the potentialdifference between members of the second electrode pair, depending onwhether the two magnetic domain walls are held (i) both in the firstgap, (ii) both in the second gap, or (iii) one in the first gap and onein the second gap.
 7. A magnetic recording element according to claim 6,additionally comprising two means in the first gap for pinning themagnetic domain wall.